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january 2016 docid022356 rev 3 1 / 15 this is informati on on a product in full production. www.st.com STL66N3LLH5 automotive - grade dual n - channel 30 v, 4.5 m typ., 80 a stripfet? h5 power mosfet in a powerflat? 5x6 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d STL66N3LLH5 30 v 5.8 m 80 a ? designed for automotive applications and aec - q101 qualified ? low on - resistance r ds(on) ? high avalanche ruggedness ? low gate drive power loss ? wettable flank package ap plications ? switching applications ? automotive description this device is an n - channel power mosfet developed using stmicroelectronics stripfet? h5 technology. the device has been optimized to achieve very low on - state resistance, contributing to a fom that is among the best in its class. table 1: device summary order code marking package packing STL66N3LLH5 66n3llh5 powerflat? 5x6 tape and reel
contents STL66N3LLH5 2 / 15 docid022356 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package information ................................ ................................ ..... 10 4.1 powerflat? 5x6 package information ................................ ......... 10 4.2 powerflat? 5x6 packing information ................................ .......... 12 5 revision history ................................ ................................ ............ 14
STL66N3LLH5 electrical ratings docid022356 rev 3 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 30 v v gs gate - source voltage 22 v i d (1) drain current (continuous) at t case = 25 c 80 a drain current (continuous) at t case = 100 c 57 i d (2) drain current (continuous) at t pcb = 25 c 21 a drain current (continuous) at t pcb = 100 c 14.5 i dm (2) (3) drain current (pulsed) 84 a p tot (1) total dissipation at t case = 25 c 72 w p tot (2) total dissipation at t pcb = 25 c 4.8 t j operating junction temperature range - 55 to 175 c t stg storage temperature range notes: (1) this value is rated according to r thj - c (2) this value is rated according to r thj - pcb (3) pulse width is limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 2.08 c/w r thj - pcb (1) thermal resistance junction - pcb 31.3 notes: (1) when mounted on a 1 - inch2 fr - 4, 2 oz copper board, t < 10 s. table 4: avalanche characteristics symbol parameter value unit i av avalanche current, not repetitive 10.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 24 v) 180 mj
electrical characteristics STL66N3LLH5 4 / 15 docid022356 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 250 a 30 v i dss zero gate voltage drain current v gs = 0 v, v ds = 30 v 1 a v gs = 0 v, v ds = 30 v, t c = 125 c 10 i gss gate - body leakage current v ds = 0 v, v gs = 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 3 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 10.5 a 4.5 5.8 m v gs = 4.5 v, i d = 10.5 a 6 7.5 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 1500 - pf c oss output capacitance - 295 - c rss reverse transfer capacitance - 39 - q g total gate charge v dd = 15 v, i d = 21 a, v gs = 4.5 v (see figure 14: "test circuit for gate charge behavior" ) - 12 - nc q gs gate - source charge - 4 - q gd gate - drain charge - 4.7 - table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 15 v, i d = 10.5 a r g = 4.7 , v gs = 10 v (see figure 13: "test circuit for resistive load switching times" and ) - 9.3 - ns t r rise time - 14.5 - t d(off) turn - off delay time - 22.7 - t f fall time - 4.5 -
STL66N3LLH5 electrical characteristics docid022356 rev 3 5 / 15 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 21 a i sdm (1) source - drain current (pulsed) - 84 a v sd (2) forward on voltage v gs = 0 v, i sd = 19 a - 1.1 v t rr reverse recovery time i sd = 19 a, di/dt = 100 a/s, v dd = 25 v, t j = 150 c (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 25 ns q rr reverse recovery charge - 17.5 nc i rrm reverse recovery current - 1.4 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STL66N3LLH5 6 / 15 docid022356 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics
STL66N3LLH5 electrical characteristics docid022356 rev 3 7 / 15 figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance figure 8 : capacitance variations figure 9 : normalized gate thresho ld voltage vs temperature
electrical characteristics STL66N3LLH5 8 / 15 docid022356 rev 3 figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics 0.4 0.5 0.6 0.7 0.8 0.9 v sd (v) 0 5 10 15 i sd (a) t j =-55 c t j =25 c t j =150 c hv42980
STL66N3LLH5 test circuits docid022356 rev 3 9 / 15 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
package information STL66N3LLH5 10 / 15 docid022356 rev 3 4 package information in order to meet environmental requirements, st offers these d evices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 powerflat? 5x6 package information figure 19 : powerflat? 5x6 wf type c package outline 8231817_wf_typec_r12
STL66N3LLH5 package informa tion docid022356 rev 3 11 / 15 table 9: powerflat? 5x6 wf type c mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 c 5.80 6.00 6.20 d 5.00 5.20 5.40 d2 4.15 4.45 d3 4.05 4.20 4.35 d4 4.80 5.0 5.20 d5 0.25 0.4 0.55 d6 0.15 0.3 0.45 e 1.27 e 6.20 6.40 6.60 e2 3.50 3.70 e3 2.35 2.55 e4 0.40 0.60 e5 0.08 0.28 e6 0.2 0.325 0.450 e7 0.85 1.00 1.15 k 1.05 1.35 l 0.90 1.00 1.10 l1 0.175 0.275 0.375 0 12
package information STL66N3LLH5 12 / 15 docid022356 rev 3 figure 20 : powerflat? 5x6 recommended footprint (dimensions are in mm) 4.2 powerflat? 5x6 packing information figure 21 : powerflat? 5x6 wf tape 8231817_footprint_rev_12
STL66N3LLH5 package information docid022356 rev 3 13 / 15 figure 22 : powerflat? 5x6 package orientation in carrier tape figure 23 : powerflat? 5x6 reel
revision history STL66N3LLH5 14 / 15 docid022356 rev 3 5 revision history table 10: document revision history date revision changes 19 - oct - 2011 1 first release. 17 - dec - 2014 2 document status promoted from preliminary to production data. updated title, features and description in cover page. updated chapter: package mechanical data and chapter: packaging mechanical data. 22 - jan - 2016 3 updated title and features in cover page. updated section 4.1: "powerflat? 5x6 package information" minor text changes.
STL66N3LLH5 docid022356 rev 3 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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